WCVDprocess

... W used in the CVD process. Improved ionized metal plasma (IMP) TiN deposition that minimized preferential TiN deposition on the via lip, coupled with W ...

由 PI Lee 著作 · 1989 · 被引用 48 次 — Process Co-Optimization of CVD and CMP for Tungsten Metallization · Pulsed CVD-W Nucleation Layer Using WF6 and B2H6 for Low Resistivity W · Impact of Film ...

The chemical vapor deposition of tungsten is done by using a WF 6 vapor with a gas flow of about 15-60 sccm. Generally, the time of the process is controlled ...

The Volta CVD W film lowers contact resistance by up to 90%, depending upon critical dimensions and process flow. It thereby improves device power delivery, ...

The Integrated Materials Solution for selective deposition combines specialized pre-treatment of surfaces with a unique tungsten deposition process. Endura ...

2024年2月29日 — Tungsten (W) thin films were deposited using the modified chemical vapor deposition (CVD), the so-called pulsed CVD, and their properties ...

由 J Berthold 著作 · 1989 · 被引用 18 次 — CVD-W deposition and dry etch processes for planarized metallizations and tungsten interconnect techniques · Abstract · References · Cited by (0) · Recommended ...

由 WK Yeh 著作 · 1996 · 被引用 6 次 — This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF6 ...

化學氣相沉積（英語：chemical vapor deposition，簡稱CVD）是一種用來產生純度高、效能好的固態材料的化學技術。半導體產業使用此技術來成長薄膜。典型的CVD製程是將 ...